Evaluation of the extraction method of mobility in InGaAs n-MOSFETs

Author

Matsuda, Akihiro ; Hiroki, Akira ; Goto, Yuta

Author_Institution

Grad. Sch. of Sci. & Technol., Kyoto Inst. of Technol., Kyoto, Japan

fYear

2015

fDate

4-5 June 2015

Firstpage

72

Lastpage

73

Abstract

In this paper, we evaluate the extraction method of the inversion layer mobility using a drain current analysis model. The model parameters have been extracted from the measured value of the current characteristics of a high mobility InGaAs n-MOSFET. The analysis model has the gate voltage dependence of the channel length modulation coefficient. It is found that the mobility shows within 10 percent accuracy in the range more than 0.8 V. As a result, it is found that this method has a sufficient accuracy for high mobility InGaAs n-MOSFETs.

Keywords

III-V semiconductors; MOSFET; gallium arsenide; indium compounds; inversion layers; semiconductor device models; InGaAs; InGaAs n-MOSFET; channel length modulation coefficient; drain current analysis; extraction method; gate voltage dependence; inversion layer mobility; Accuracy; Analytical models; Charge carrier density; Indium gallium arsenide; Logic gates; MOSFET circuits; Voltage measurement; InGaAs n-MOSFETs; extraction method; inversion layer mobility;

fLanguage

English

Publisher

ieee

Conference_Titel

Future of Electron Devices, Kansai (IMFEDK), 2015 IEEE International Meeting for

Conference_Location

Kyoto

Print_ISBN

978-1-4799-8614-9

Type

conf

DOI

10.1109/IMFEDK.2015.7158555

Filename

7158555