GaN-on-Si Vertical Schottky and p-n Diodes

Author

Yuhao Zhang ; Min Sun ; Piedra, Daniel ; Azize, Mohamed ; Xu Zhang ; Fujishima, Tatsuya ; Palacios, T.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Massachusetts Inst. of Technol., Cambridge, MA, USA

Volume

35

Issue

6

fYear

2014

fDate

Jun-14

Firstpage

618

Lastpage

620

Abstract

This letter demonstrates GaN vertical Schottky and p-n diodes on Si substrates for the first time. With a total GaN drift layer of only 1.5-μm thick, a breakdown voltage (BV) of 205 V was achieved for GaN-on-Si Schottky diodes, and a soft BV higher than 300 V was achieved for GaN-on-Si p-n diodes with a peak electric field of 2.9 MV/cm in GaN. A trap-assisted space-charge-limited conduction mechanism determined the reverse leakage and breakdown mechanism for GaN-on-Si vertical p-n diodes. The ON-resistance was 6 and 10 mQ · cm² for the vertical Schottky and p-n diode, respectively. These results show the promising performance of GaN-on-Si vertical devices for future power applications.

Keywords

III-V semiconductors; Schottky diodes; electric breakdown; electric fields; gallium compounds; p-i-n diodes; wide band gap semiconductors; BV; GaN-on-Si vertical Schottky diodes; ON-resistance; breakdown voltage; drift layer; electric field; p-n diodes; power applications; reverse leakage; size 1.5 mum; trap-assisted space-charge-limited conduction mechanism; voltage 205 V; Aluminum gallium nitride; Gallium nitride; Leakage currents; Schottky diodes; Silicon; Substrates; GaN-on-Si; power electronics; power electronics.; vertical Schottky and p-n diodes; vertical breakdown mechanism;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2014.2314637

Filename

6786327