• DocumentCode
    723227
  • Title

    Electromigration and thermal migration in Pb-free interconnects

  • Author

    Minhua Lu ; Wassick, Thomas ; Advocate, Gerald ; Backes, Ben

  • Author_Institution
    IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA
  • fYear
    2015
  • fDate
    26-29 May 2015
  • Firstpage
    2036
  • Lastpage
    2039
  • Abstract
    A set of experiments designed to understand the evolution of electromigration damage in Pb-free interconnects was conducted. It is found that the degree of EM damage is higher with increasing stress current and stress duration, and dependent on the closeness of the c-axis of the Sn grain to current direction. Controlling the solder texture is one of the key elements in improving EM lifetime. The effect of thermal gradient on solder reliability is studied by applying heat to the chip side of the solder joint. No thermal gradient induced migration is observed in Sn bumps with temperature gradients as high as 6.8×105 °C/m.
  • Keywords
    electromigration; integrated circuit interconnections; integrated circuit reliability; tin; Sn; current direction; electromigration damage; lead free interconnects; solder texture; thermal gradient; thermal migration; tin grain; Electromigration; Stress; Temperature sensors; Thermal resistance; Thermal stresses; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Components and Technology Conference (ECTC) , 2015 IEEE 65th
  • Conference_Location
    San Diego, CA
  • Type

    conf

  • DOI
    10.1109/ECTC.2015.7159882
  • Filename
    7159882