• DocumentCode
    72375
  • Title

    Electromechanical Diode Cell Scaling for High-Density Nonvolatile Memory

  • Author

    Hutin, Louis ; Wookhyun Kwon ; Chuang Qian ; Tsu-Jae King Liu

  • Author_Institution
    Leti, CEA, Grenoble, France
  • Volume
    61
  • Issue
    5
  • fYear
    2014
  • fDate
    May-14
  • Firstpage
    1382
  • Lastpage
    1387
  • Abstract
    A simple electromechanical diode nonvolatile memory (NVM) cell design was recently proposed and demonstrated to be well suited for implementation in a cross-point memory array architecture. In this paper, a scaling methodology for this new NVM technology is developed with the aid of a calibrated analytical model. A nanoelectromechanical NVM cell (with 20-nm minimum feature size) is projected to operate with voltages below 2 V and sub-1-ns programming time.
  • Keywords
    nanoelectromechanical devices; random-access storage; cross point memory array; electromechanical diode cell scaling; high density nonvolatile memory; nanoelectromechanical NVM cell; size 20 nm; Analytical models; Computer architecture; Electrostatics; Force; Microprocessors; Nonvolatile memory; Structural beams; Microelectromechanical devices; nonvolatile memory;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2014.2312612
  • Filename
    6786335
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=72375