Title :
RF analysis of MEMS shunt capacitive switch with gold and aluminium beam
Author :
Agarwal, Saurabh ; Kumar, Mithlesh ; Guha, Koushik ; Baishya, Srimanta
Author_Institution :
Dept. of Electron. & Commun. Eng., NIT Silchar, Silchar, India
Abstract :
In a practical MEMS switch, there is a gap between the beam and the signals lines. Based on this, a study on frequency response starting from dc to radio frequency for Gold and Aluminium is carried out. Study reveals that the pull-in voltage and capacitance ratio for Gold are 13.8 V and 88.3, respectively; while for Aluminium these values are 11.4 V and 82.4, respectively. Also a detailed study of variation of insertion loss with frequency is also carried out. The insertion and isolation losses with gold as beam layer are -1.42 and 40.4 dB, respectively, at radio frequency, while the same losses for Aluminium as beam layer are -1.19 and 36.1 dB, respectively at the same frequency.
Keywords :
aluminium; frequency response; gold; microswitches; Al; Au; MEMS shunt capacitive switch; RF analysis; aluminium beam; beam layer; capacitance ratio; frequency response; gain -1.19 dB; gain -1.42 dB; gold; insertion loss; isolation losses; loss 36.1 dB; loss 40.4 dB; pull-in voltage; radio frequency; signal lines; voltage 11.4 V; voltage 13.8 V; Aluminum; Capacitance; Dielectrics; Gold; Micromechanical devices; Radio frequency; Switches; Capacitance Ratio; Capacitive Switch; Radio Frequency Micro electrelectro mechanical systems (MEMS);
Conference_Titel :
Computer Engineering and Applications (ICACEA), 2015 International Conference on Advances in
Conference_Location :
Ghaziabad
DOI :
10.1109/ICACEA.2015.7164713
