Modeling of GaN-Based Normally-Off FinFET

Author

Yadav, Chandresh ; Kushwaha, Pragya ; Khandelwal, Sourabh ; Duarte, Juan Pablo ; Chauhan, Yogesh Singh ; Chenming Hu

Author_Institution

Dept. of Electr. Eng., Indian Inst. of Technol. Kanpur, Kanpur, India

Volume

35

Issue

6

fYear

2014

fDate

Jun-14

Firstpage

612

Lastpage

614

Abstract

In this letter, a macromodel for normally-off (enhancement mode) AlGaN/GaN-based FinFET (2-DEG channel at top with two MOS like sidewall channels) is proposed. AlGaN/GaN-based FinFET devices have improved gate control on the channel due to additional sidewall gates compared with planar structures, but device characteristics exhibit strong nonlinear dependence on fin-width. The proposed model captures both 2-DEG and sidewall channel conduction as well as the fin-width dependency on device characteristics. Model shows excellent agreement with state-of-the-art experimental data.

Keywords

III-V semiconductors; MOSFET; aluminium compounds; gallium compounds; semiconductor device models; wide band gap semiconductors; 2-DEG channel; AlGaN-GaN; device characteristics; fin-width dependency; gate control; nonlinear dependence; normally-off FinFET macromodel; planar structures; sidewall channel conduction; sidewall gates; Aluminum gallium nitride; Data models; FinFETs; Gallium nitride; HEMTs; Logic gates; 2-DEG; AlGaN/GaN; III-V FinFET; compact model; compact model.; tri-gate;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2014.2314700

Filename

6786354