DocumentCode
725690
Title
Low Standby Power Capacitively Coupled Sense Amplifier for wide voltage range operation of dual rail SRAMs
Author
Grover, Anuj ; Kumar, Promod ; Daud, Mohammad ; Visweswaran, G.S. ; Parthasarathy, Chittoor ; Noel, Jean-Philippe ; Turgis, David ; Giraud, Bastien ; Moritz, Guillaume
Author_Institution
STMicroelectron., Noida, India
fYear
2015
fDate
1-3 June 2015
Firstpage
1
Lastpage
4
Abstract
Dual Rail SRAMs are widely used to enable Dynamic Voltage and Frequency Scaling (DVFS) in SRAMs where array voltage cannot be scaled down. DVFS operating points are limited by maximum differential supported between two supplies of the SRAM. To extend gains of DVFS, we propose a Low Standby Power - Capacitively Coupled Sense Amplifier (LSTP-C2SA) that enables further lowering of periphery supply in Dual Rail SRAMs without leading to SRAM cell instability. We present a design method to optimally size the coupling capacitance in LSTP-C2SAs. Designs with LSTP-C2SA are shown to consume 43% lesser read power in DVFS operation at 0.4V in 28nm UTBB FD-SOI when compared to an implementation with standard latch sense amplifier. Silicon measurements confirm LSTP-C2SA functionality at 0.35V.
Keywords
SRAM chips; amplifiers; flip-flops; low-power electronics; silicon-on-insulator; DVFS; LSTP-C2SA; UTBB FD-SOI; array voltage; dual rail SRAM; dynamic voltage and frequency scaling; latch sense amplifier; low standby power-capacitively coupled sense amplifier; size 28 nm; standby power capacitively coupled sense amplifier; Capacitance; Couplings; Energy efficiency; Power demand; Rails; SRAM cells; DVFS; Dual Rail SRAMs; Sense Amplifier; Wide Voltage Range;
fLanguage
English
Publisher
ieee
Conference_Titel
IC Design & Technology (ICICDT), 2015 International Conference on
Conference_Location
Leuven
Type
conf
DOI
10.1109/ICICDT.2015.7165876
Filename
7165876
Link To Document