Title :
A divide-by-3 injection-locked frequency divider in 0.18 µm CMOS process for K band applications
Author :
Yu-Hsin Chang ; Yen-Chung Chiang
Author_Institution :
Dept. of Electr. Eng., Nat. Chung Hsing Univ., Taichung, Taiwan
Abstract :
A divide-by-3 injection-locked frequency divider (ILFD) implemented in the 0.18 μm CMOS process is proposed for K band applications. The proposed ILFD adopts the stacked cross-coupled transistor pair topology to enhance the required frequency component and to reduce dc power consumption. Without the help of varactors, the measured locking range of the proposed ILFD is from 20.4 to 23.8 GHz under 0-dBm input power level. The core circuit dissipates 3.9 mW power from a 1.5-V dc supply.
Keywords :
CMOS integrated circuits; frequency dividers; microwave integrated circuits; phase locked loops; CMOS process; DC power consumption; K band; divide-by-3 ILFD; frequency 20.4 GHz to 23.8 GHz; injection-locked frequency divider; power 3.9 mW; size 0.18 mum; transistor pair topology; voltage 1.5 V; CMOS integrated circuits; CMOS process; Frequency conversion; Impedance matching; Indexes; Semiconductor device measurement; Tuning; CMOS process; injection-locked frequency divider; locking range; microwave circuits; phase locked loop; phase noise;
Conference_Titel :
Microwave Symposium (IMS), 2015 IEEE MTT-S International
Conference_Location :
Phoenix, AZ
DOI :
10.1109/MWSYM.2015.7166735
