DocumentCode
725975
Title
X-band outphasing GaN MMIC PA with power recycling
Author
Litchfield, Michael ; Popovic, Zoya
Author_Institution
Univ. of Colorado at Boulder, Boulder, CO, USA
fYear
2015
fDate
17-22 May 2015
Firstpage
1
Lastpage
4
Abstract
We demonstrate an outphasing GaN MMIC PA with power recycling operating at 10.35 GHz. The MMIC includes high-efficiency PAs, a miniaturized rat-race combiner, and a high-efficiency, self-synchronous transistor rectifier. A peak total efficiency of 65.2% is achieved with 6W of output power. Up to 2.24W of rectified power improves total efficiency by up to 6.5 points at -3.5 dB normalized output power, matching presented theory.
Keywords
III-V semiconductors; MMIC power amplifiers; gallium compounds; rectifiers; wide band gap semiconductors; GaN; X-band; frequency 10.35 GHz; miniaturized rat-race combiner; outphasing GaN MMIC PA; power 6 W; power amplifiers; power recycling; self-synchronous transistor rectifier; Wireless communication; LINC; outphasing; power amplifier; rectifier;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium (IMS), 2015 IEEE MTT-S International
Conference_Location
Phoenix, AZ
Type
conf
DOI
10.1109/MWSYM.2015.7166759
Filename
7166759
Link To Document