DocumentCode :
725992
Title :
Broadband class-E power amplifier designed by lumped-element network transforms and GaN FETs
Author :
Beltran, Ramon A.
Author_Institution :
Skyworks Solutions, Inc., Newbury Park, CA, USA
fYear :
2015
fDate :
17-22 May 2015
Firstpage :
1
Lastpage :
4
Abstract :
It has been shown that broadband operation of class-E amplifiers is possible using the reactance compensation technique. In this paper, broadband lumped-element network transforms are used in order to design the loading network that provides broadband reactance compensation and broadband impedance matching simultaneously while keeping high efficiency and maintaining output power within wide bandwidth. The final output network topology is canonic and alternates series and shunt components which are more suitable for practical implementation and tuning. As proof of concept, a GaN FET prototype is presented achieving 80% efficiency over 43% fractional bandwidth at around 255-MHz and 60% efficiency over an octave bandwidth at around 245-MHz.
Keywords :
III-V semiconductors; field effect transistors; gallium compounds; impedance matching; lumped parameter networks; network topology; radiofrequency power amplifiers; wide band gap semiconductors; GaN; GaN FET; broadband class-E power amplifier; broadband impedance matching; broadband lumped-element network transforms; broadband reactance compensation; efficiency 60 percent; efficiency 80 percent; network topology; shunt components; Broadband communication; Capacitance; Field effect transistors; Loading; Power amplifiers; Radio frequency; Resistors; Amplifier; broadband; class-E; efficiency;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium (IMS), 2015 IEEE MTT-S International
Conference_Location :
Phoenix, AZ
Type :
conf
DOI :
10.1109/MWSYM.2015.7166784
Filename :
7166784
Link To Document :
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