• DocumentCode
    725992
  • Title

    Broadband class-E power amplifier designed by lumped-element network transforms and GaN FETs

  • Author

    Beltran, Ramon A.

  • Author_Institution
    Skyworks Solutions, Inc., Newbury Park, CA, USA
  • fYear
    2015
  • fDate
    17-22 May 2015
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    It has been shown that broadband operation of class-E amplifiers is possible using the reactance compensation technique. In this paper, broadband lumped-element network transforms are used in order to design the loading network that provides broadband reactance compensation and broadband impedance matching simultaneously while keeping high efficiency and maintaining output power within wide bandwidth. The final output network topology is canonic and alternates series and shunt components which are more suitable for practical implementation and tuning. As proof of concept, a GaN FET prototype is presented achieving 80% efficiency over 43% fractional bandwidth at around 255-MHz and 60% efficiency over an octave bandwidth at around 245-MHz.
  • Keywords
    III-V semiconductors; field effect transistors; gallium compounds; impedance matching; lumped parameter networks; network topology; radiofrequency power amplifiers; wide band gap semiconductors; GaN; GaN FET; broadband class-E power amplifier; broadband impedance matching; broadband lumped-element network transforms; broadband reactance compensation; efficiency 60 percent; efficiency 80 percent; network topology; shunt components; Broadband communication; Capacitance; Field effect transistors; Loading; Power amplifiers; Radio frequency; Resistors; Amplifier; broadband; class-E; efficiency;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium (IMS), 2015 IEEE MTT-S International
  • Conference_Location
    Phoenix, AZ
  • Type

    conf

  • DOI
    10.1109/MWSYM.2015.7166784
  • Filename
    7166784