A 40 Gb/s 4 Vpp IQ modulator driver in 0.13 µm SiGe:C BiCMOS technology for 25 Ω Mach-Zehnder Modulators

Author

Rito, P. ; Lopez, I. Garcia ; Micusik, D. ; Borngraber, J. ; Zimmermann, L. ; Ulusoy, A.C. ; Kissinger, D.

Author_Institution

IHP, Frankfurt (Oder), Germany

fYear

2015

fDate

17-22 May 2015

Firstpage

1

Lastpage

4

Abstract

In this work, a modulator driver in 0.13 μm SiGe:C BiCMOS technology for 25 Ω travelling wave electrode (TWE) Mach-Zehnder Modulators (MZM) is presented. The design integrates two channels for differential driving of IQ signals. The driver delivers a differential output signal of 4 Vpp, exhibits a differential gain of 12 dB and has an output return loss better than 9 dB. It works from a 4.7 V supply and dissipates 1.1 W per channel. Data rate of 40 Gb/s is demonstrated by time-domain measurements. To the best knowledge of the authors, this is the first time a design of a driver suitable for 25 Ω TWE MZMs is presented.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; carbon; driver circuits; electrodes; integrated circuit design; modulators; BiCMOS technology; IQ modulator driver; IQ signals; SiGe:C; TWE MZM; TWE Mach-Zehnder modulators; bit rate 40 Gbit/s; differential gain; power 1.1 W; resistance 25 ohm; return loss; size 0.13 mum; time-domain measurements; travelling wave electrode; voltage 4.7 V; Current measurement; Gain; III-V semiconductor materials; Indium phosphide; Mach-Zehnder interferometers; Power generation; Propagation losses; BiCMOS; Mach-Zehnder modulator; SiGe HBT; broadband amplifier; modulator driver;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium (IMS), 2015 IEEE MTT-S International

Conference_Location

Phoenix, AZ

Type

conf

DOI

10.1109/MWSYM.2015.7166957

Filename

7166957