Integrated C-band (4–8 GHz) frequency-tunable & bandwidth-tunable active band-stop filter in 0.13-µm SiGe BiCMOS

Author

Mohammadi, Laya ; Kwang-Jin Koh

Author_Institution

ECE Dept., Virginia Tech, Blacksburg, VA, USA

fYear

2015

fDate

17-22 May 2015

Firstpage

1

Lastpage

4

Abstract

An active notch filter for interference rejection at C band is presented. In the design, a sharp notch, typically -50 dB for the entire C-band, is synthesized by subtracting BPF output from all-pass output. Unlike prior works, notch attenuation does not depend on the Q of the BPF LC tank. The proposed filter has been fabricated in a 0.13 μm SiGe BiCMOS process. Measurement results show 0~1 dB gain, 8~10.8 dB NF, and -6~-9 dBm IP_-1dB in the pass band at 4-8 GHz. The filter draws 20-27.6 mA from a 3.3 V supply and the die area is 0.63×0.63 mm².

Keywords

BiCMOS integrated circuits; Ge-Si alloys; active filters; bipolar MMIC; interference suppression; microwave filters; notch filters; SiGe; SiGe BiCMOS process; active band-stop filter; active notch filter; bandwidth-tunable filter; current 20 mA to 27.6 mA; frequency 4 GHz to 8 GHz; frequency-tunable filter; gain 0 dB to 1 dB; integrated C-band filter; interference rejection; noise figure 8 dB to 10.8 dB; sharp notch; size 0.13 mum; voltage 3.3 V; Filtering theory; Interference; Noise measurement; Filters; Q tuning; active notch filter; all-pass filter; band-pass filter; frequency tuning; interference rejection;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium (IMS), 2015 IEEE MTT-S International

Conference_Location

Phoenix, AZ

Type

conf

DOI

10.1109/MWSYM.2015.7167026

Filename

7167026