Wideband CMOS decoupling power line for millimeter-wave applications

Author

Amakawa, S. ; Goda, R. ; Katayama, K. ; Takano, K. ; Yoshida, T. ; Fujishima, M.

Author_Institution

Grad. Sch. of Adv. Sci. of Matter, Hiroshima Univ., Hiroshima, Japan

fYear

2015

fDate

17-22 May 2015

Firstpage

1

Lastpage

4

Abstract

A CMOS decoupling power line intended for use in millimeter-wave circuits is fabricated and characterized up to 325 GHz. It is designed to have a low dc resistance and an extremely low high-frequency characteristic impedance. The input impedance of a 0.3-mm-long line is shown to stay roughly below 1 Ω in 20 GHz-170GHz and below 2 Ω in 220 GHz-325 GHz, irrespective of whether the far end of the line is open- or short-ended, which clearly demonstrates its extremely wideband decoupling capability.

Keywords

CMOS integrated circuits; electromagnetic interference; field effect MIMIC; transmission lines; waveguides; frequency 20 GHz to 170 GHz; frequency 220 GHz to 325 GHz; high frequency characteristic impedance circuits; low DC resistance millimeter wave circuits; millimeter wave applications; size 0.3 mm; wideband CMOS decoupling power line; wideband decoupling power line; Capacitors; Method of moments; Resistance; bypass capacitor; characteristic impedance; power integrity; radio-frequency interference; transmission line;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium (IMS), 2015 IEEE MTT-S International

Conference_Location

Phoenix, AZ

Type

conf

DOI

10.1109/MWSYM.2015.7167043

Filename

7167043