A 120 watt GaN power amplifier MMIC utilizing harmonic tuning circuits for S-band applications

Author

Alexander, Andrew ; Leckey, Jonathan

Author_Institution

M/A-COM Technol. Solutions, Belfast, UK

fYear

2015

fDate

17-22 May 2015

Firstpage

1

Lastpage

3

Abstract

The design of a 120 Watt S-band GaN power amplifier MMIC is presented. The amplifier was designed using the 0.25um GaN on SiC process from GCS. At Vds= 40V, this two stage amplifier achieved greater than 135W saturated output power, with higher than 47% power added efficiency and with 22dB gain in the 2.8 - 3.5 GHz band. Additionally mid band output power of 195W was achieved at Vds=50V. This result is the highest power ever reported for a two stage GaN MMIC. The use of input and output harmonic terminations for broadband efficiency enhancement was demonstrated.

Keywords

III-V semiconductors; MMIC power amplifiers; UHF power amplifiers; gallium compounds; integrated circuit design; silicon compounds; wide band gap semiconductors; GaN; MMIC power amplifier; SiC; frequency 2.8 GHz to 3.5 GHz; gain 22 dB; harmonic tuning circuits; power 120 W; power 195 W; power added efficiency; size 0.25 mum; voltage 40 V; voltage 50 V; Atmospheric measurements; Frequency measurement; Gallium nitride; Load modeling; Particle measurements; Power generation; Silicon carbide; GaN HEMT; MMIC; Power Amplifier;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium (IMS), 2015 IEEE MTT-S International

Conference_Location

Phoenix, AZ

Type

conf

DOI

10.1109/MWSYM.2015.7167045

Filename

7167045