5.0 to 10.6 GHz 0.18 µm CMOS power amplifier with excellent group delay for UWB applications

Author

Mosalam, H. ; Allam, A. ; Jia, H. ; Abdelrahman, A. ; Kaho, Takana ; Pokharel, Ramesh K.

Author_Institution

Electron. & Commun. Eng. Dept., Egypt-Japan Univ. of Sci. & Technol., Alexandria, Egypt

fYear

2015

fDate

17-22 May 2015

Firstpage

1

Lastpage

4

Abstract

The optimization technique to realize the minimum group delay (GD) of a 5-10.6 GHz, two stages CMOS Ultra Wideband power amplifier (UWB-PA) is presented and implemented in 0.18 μm CMOS technology. The fabricated UWB-PA has a power gain (|S₂₁|) of 14± 1 dB, maximum power added efficiency and an output 1-dB compression of 10 %, and 2 dBm, respectively at 6 GHz. In addition, the PA has an excellent small group delay variation of 147± 40 ps with power consumption of 20 mW and this is the smallest variations among CMOS PAs so far reported.

Keywords

CMOS integrated circuits; microwave power amplifiers; ultra wideband technology; CMOS; UWB-PA; frequency 5 GHz to 10.6 GHz; group delay; power 20 mW; power added efficiency; power consumption; power gain; size 0.18 mum; ultra wideband power amplifier; CMOS integrated circuits; CMOS technology; Delays; Equivalent circuits; Group Delay (GD); Power Added Efficiency (PAE); Power Amplifier (PA); Ultra-wideband (UWB);

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium (IMS), 2015 IEEE MTT-S International

Conference_Location

Phoenix, AZ

Type

conf

DOI

10.1109/MWSYM.2015.7167082

Filename

7167082