DocumentCode
726558
Title
Operation and modulation of H7 current source inverter with hybrid SiC and Si semiconductor switches
Author
Weiqi Wang ; Feng Gao ; Shuling Rui
Author_Institution
Sch. of Electr. Eng., Shandong Univ., Jinan, China
fYear
2015
fDate
1-5 June 2015
Firstpage
135
Lastpage
141
Abstract
This paper proposes a H7 current source inverter (CSI) with a single shunt-connected silicon carbide (SiC) switch and traditional H6 CSI circuitry, which could employ the superior characteristics of SiC switch to significantly increase the whole switching frequency with expected low losses simultaneously. A novel modulation scheme for H7 current source inverter is then proposed, which can significantly reduce the switching counts and meanwhile realize the zero current switching (ZCS) for the rear-end CSI circuitry. The proposed H7 current source inverter can guarantee the high performance and high efficiency with a smaller DC inductor. To some extent, the H7 current source inverter circuitry could be a universal solution for all CSI systems. Matlab simulations and experimental verifications have been presented to show the performance of proposed inverter.
Keywords
constant current sources; elemental semiconductors; invertors; power inductors; semiconductor switches; silicon; silicon compounds; wide band gap semiconductors; zero current switching; H7 current source inverter; Matlab simulations; Si; Si semiconductor switches; SiC; ZCS; rear-end CSI circuitry; single shunt-connected silicon carbide switch; smaller DC inductor; switching counts; switching frequency; traditional H6 CSI circuitry; zero current switching; Inductors; Inverters; Modulation; Silicon carbide; Switches; Switching circuits; Topology; H7 current source inverter; SiC switch; shoot-through insertion; zero current switching;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics and ECCE Asia (ICPE-ECCE Asia), 2015 9th International Conference on
Conference_Location
Seoul
Type
conf
DOI
10.1109/ICPE.2015.7167777
Filename
7167777
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