Simple and accurate single event charge collection macro modeling for circuit simulation

Author

Privat, Aymeric ; Clark, Lawrence T.

Author_Institution

Sch. of Electr., Comput. & Energy Eng., Arizona State Univ. (ASU), Tempe, AZ, USA

fYear

2015

fDate

24-27 May 2015

Firstpage

1858

Lastpage

1861

Abstract

A simple macro-model to accurately simulate upset error on CMOS devices is presented. This macro-model can accurately simulate the typical behavior of single event effect (SEE) caused by ionizing radiation charge collection at N type and P type diffusions. The model is calibrated using 3-D mixed mode technology computer aided design (TCAD) device simulations and implemented as a SPICE circuit macro-model. The model uses a dependent current source with a Weibull distribution to model the current injection on circuit node. The model shows physical response and adjusting parameters allows high accuracy to the 3-D TCAD simulated response.

Keywords

CMOS integrated circuits; SPICE; Weibull distribution; circuit simulation; radiation hardening (electronics); technology CAD (electronics); CMOS devices; SPICE circuit macro-model; TCAD device; Weibull distribution; circuit simulation; current injection; ionizing radiation charge collection; single event charge collection macro modeling; single event effect; technology computer aided design; upset error; Computational modeling; Integrated circuit modeling; MOSFET; Solid modeling; Transient analysis; 3D simulation; Ionizing particle; SPICE; Single Event Effects; TCAD;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems (ISCAS), 2015 IEEE International Symposium on

Conference_Location

Lisbon

Type

conf

DOI

10.1109/ISCAS.2015.7169019

Filename

7169019