DocumentCode
727349
Title
Analysis of radiation effect on the threshold voltage of flash memory device
Author
Hossain, Nahid M. ; Koppu, Jitendra ; Chowdhury, Masud H.
Author_Institution
Comput. Sci. & Electr. Eng., Univ. of Missouri - Kansas City, Kansas City, MO, USA
fYear
2015
fDate
24-27 May 2015
Firstpage
2896
Lastpage
2899
Abstract
Flash memory experiences adverse effects due to radiation. These effects can be raised in terms of doping, feature size, supply voltages, layout, shielding. The the operating point shift of the device forced to enter the logically-undefined region and cause upset and data errors under radiation exposure. In this letter, the threshold voltage shift of the floating gate transistor (FGT) is analyzed by a mathematical model.
Keywords
flash memories; radiation effects; transistors; data errors; flash memory device; floating gate transistor; logically-undefined region; radiation effect; radiation exposure; threshold voltage shift; upset errors; Charge carrier processes; Flash memories; Logic gates; Nonvolatile memory; Radiation effects; Spontaneous emission; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems (ISCAS), 2015 IEEE International Symposium on
Conference_Location
Lisbon
Type
conf
DOI
10.1109/ISCAS.2015.7169292
Filename
7169292
Link To Document