DocumentCode
72833
Title
Contact Thickness Effects in Bottom-Contact Coplanar Organic Field-Effect Transistors
Author
Xu, Yan ; Scheideler, William ; Liu, Cong ; Balestra, F. ; Ghibaudo, Gerard ; Tsukagoshi, Kazuhito
Author_Institution
WPI-MANA, NIMS, Tsukuba, Japan
Volume
34
Issue
4
fYear
2013
fDate
Apr-13
Firstpage
535
Lastpage
537
Abstract
Influences of contact thickness on bottom-contact and bottom-gate coplanar organic transistors are studied. In transistors with poor-quality pentacene films, thick contacts improve mobility and lower contact resistance. However, in transistors with high-quality pentacene films, thick contacts significantly degrade performance by disrupting molecular self-organization at the contact edge. These results highlight the importance of contact thickness to such organic transistors and reveal that semiconductor morphology should be considered in designing devices with minimal contact effects.
Keywords
Contact resistance; contact thickness; mobility; organic field-effect transistors (OFETs);
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2013.2244059
Filename
6471743
Link To Document