Improvement in performance of solution processed indium-zinc-tin oxide thin film transistors by using UV Ozone treatment on zirconium oxide gate insulator

We studied solution processed amorphous indium-zinc-tin oxide (a-IZTO) TFTs, with spin coated ZrO_x as the gate insulator. The ZrO_x gate insulator was used without and with UV ozone treatment. The TFT without UV ozone treated ZrO_x showed saturation mobility (μsat) of 0.89 cm²/V, turn-on voltage (V_ON) of -0.45V, subthreshold swing (S.S) of 234mV/dec., and a current ratio I_ON/I_OFF of ~10⁷. The TFT with UV ozone treated ZrO_x gate insulator exhibits μsat of 2.60 cm²/V, V_ON of -0.6V, S.S. of 133 mV/dec., and an I_ON/I_OFF of ~10⁸. Also, as can be observed, the leakage current decreases, when the TFT was prepared with UV ozone treatment on ZrO_x gate insulator.