Evolution of hydrogen-related defect states in amorphous In-Ga-Zn-O analyzed by photoelectron emission yield experiments

Author

Hayashi, Kazushi ; Hino, Aya ; Tao, Hiroaki ; Ochi, Mototaka ; Goto, Hiroshi ; Kugimiya, Toshihiro

Author_Institution

Electron. Res. Lab., Kobe Steel, Ltd., Kobe, Japan

fYear

2015

fDate

1-4 July 2015

Firstpage

131

Lastpage

132

Abstract

Total photoyield spectroscopy (TPYS) was applied to investigate the evolution of hydrogen-related defect states in amorphous In-Ga-Zn-O (a-IGZO) thin films. It was found that the defect states located at around 4.3 eV from the vacuum level were formed as a result of hydrogenation. After thermal annealing at 300 °C, the onset of the TPYS spectra shifted to 4.15 eV. As the annealing temperature was increased, the photoyield from the defect states decreased, implying that there was outdiffusion of hydrogen with Zn from the a-IGZO. These experiments produced direct evidence which shows the formation of defect states as a result of hydrogen incorporation into the a-IGZO thin films.

Keywords

amorphous semiconductors; annealing; defect states; diffusion; gallium compounds; hydrogen; hydrogenation; indium compounds; photoelectron spectra; semiconductor thin films; InGaZnO:H; TPYS spectra; amorphous IGZO thin films; hydrogen outdiffusion; hydrogen-related defect states; hydrogenation; photoelectron emission; thermal annealing; total photoyield spectroscopy; vacuum level; Annealing; Atomic measurements; Films; Hydrogen; Semiconductor device measurement; Spectroscopy; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2015 22nd International Workshop on

Conference_Location

Kyoto

Type

conf

DOI

10.1109/AM-FPD.2015.7173219

Filename

7173219