Title :
Quasi-single crystal SiGe on insulator by Au-induced crystallization for flexible electronics
Author :
Sadoh, Taizoh ; Jong-Hyeok Park ; Aoki, Rikuta ; Miyao, Masanobu
Author_Institution :
Dept. of Electron., Kyushu Univ., Fukuoka, Japan
Abstract :
Low-temperature (≤300°C) formation of orientation-controlled large-grain (≥10 μm) SiGe crystals on insulator is desired for realization of advanced flexible electronics. To achieve this, the Au-induced crystallization technique using a-SiGe/Au stacked structures has been developed. Consequently, (111)-oriented large-grain (>10 μm) SiGe crystals are achieved on insulating substrates at low temperatures (~300°C). The grown SiGe crystals have uniform composition profiles. This technique will be useful to realize advanced flexible electronics.
Keywords :
Ge-Si alloys; crystal growth; crystallisation; flexible electronics; gold; insulating materials; (111)-oriented large-grain SiGe crystals; Au-induced crystallization; SiGe-Au; flexible electronics; insulating substrates; large-grain SiGe crystals on insulator; low-temperature formation; orientation control; quasisingle crystal SiGe on insulator; stacked structures; uniform composition profiles; Aluminum oxide; Annealing; Crystallization; Gold; Silicon germanium; Substrates;
Conference_Titel :
Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2015 22nd International Workshop on
Conference_Location :
Kyoto
DOI :
10.1109/AM-FPD.2015.7173225
