Short-Term Memory to Long-Term Memory Transition Mimicked in IZO Homojunction Synaptic Transistors

Short-term memory (STM) is a temporary potentiation of neural connections, and it can be transformed to long-term memory (LTM) through the process of rehearsal and meaningful association. Here, indium-zinc oxide (IZO)-based synaptic transistors gated by SiO₂-based proton conducting electrolyte films were fabricated. STM behavior is demonstrated by paired-pulse facilitation experiment. STM to LTM transition is realized by increasing the pulse amplitude or pulse number. Interfacial electrostatic modulation and electrochemical doping of IZO channel by mobile proton play an important role for such memory behavior and memory transition.