• DocumentCode
    729232
  • Title

    Photocurrent spectroscopy of single GaAs/AlGaAs core-multishell nanowire devices

  • Author

    Badada, Bekele ; Teng Shi ; Jackson, Howard ; Smith, Leigh ; Qiang Gao ; Tan, H. Hoe ; Jagadish, Chennupati

  • Author_Institution
    Dept. of Phys., Univ. of Cincinnati, Cincinnati, OH, USA
  • fYear
    2015
  • fDate
    21-24 June 2015
  • Firstpage
    81
  • Lastpage
    82
  • Abstract
    We investigate the optical and transport properties of single GaAs/AlGaAs core-multishell Quantum Well Tube (QWT) nanowire heterostructure. The QWT is defined by a thin (8 nm) GaAs layer embedded inside a thick Al0.4Ga0.6As shell which surrounds a 50 nm diameter GaAs NW core see Fig.1. The electrons and holes in the thin GaAs shell are radially confined and are free along the nanowire length. The radial confinement results in confined quantum states as shown in the schematics in Fig.1. These nanowires growth was achieved by two temperature MOCVD growth techniques [1, 2]. Optical studies of these nanowires show high quantum efficiency of the QWT ground state photoluminescence compared to the core luminescence. The shift to higher energies above the core corresponds to increasing quantum confinement of the ground state transition of the quantum well tube [1]. The energy eigenvalues depicted in Fig.1 are numerically calculated values of the energies of the electrons and holes confined to the quantum well tube where the hexagonal symmetry of the nanowires is approximated by cylindrical symmetry.
  • Keywords
    III-V semiconductors; MOCVD; aluminium compounds; eigenvalues and eigenfunctions; gallium arsenide; nanowires; quantum well devices; GaAs-AlGaAs; MOCVD; energy eigenvalues; optical properties; photocurrent spectroscopy; quantum well tube nanowire heterostructure; single core-multishell nanowire devices; size 50 nm; size 8 nm; transport properties; Australia; Electron tubes; Gallium arsenide; Photoconductivity; Temperature measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference (DRC), 2015 73rd Annual
  • Conference_Location
    Columbus, OH
  • Print_ISBN
    978-1-4673-8134-5
  • Type

    conf

  • DOI
    10.1109/DRC.2015.7175565
  • Filename
    7175565