DocumentCode
729236
Title
Out-of-plane strain effect on silicon-based flexible FinFETs
Author
Ghoneim, Mohamed T. ; Alfaraj, Nasir ; Torres Sevilla, Galo A. ; Fahad, Hossain M. ; Hussain, Muhammad M.
Author_Institution
Integrated Nanotechnol. Lab., King Abdullah Univ. of Sci. & Technol., Thuwal, Saudi Arabia
fYear
2015
fDate
21-24 June 2015
Firstpage
95
Lastpage
96
Abstract
Summary form only given. We report out-of-plane strain effect on silicon based flexible FinFET, with sub 20 nm wide fins and hafnium silicate based high-κ gate dielectric. Since ultra-thin inorganic solid state substrates become flexible with reduced thickness, flexing induced strain does not enhance performance. However, detrimental effects arise as the devices are subject to various out-of-plane stresses (compressive and tensile) along the channel length.
Keywords
MOSFET; dielectric materials; flexible electronics; hafnium compounds; silicon; tensile strength; HfO4Si; channel length; compressive stress; flexible FinFET; hafnium silicate; high-k gate dielectric; out-of-plane strain effect; out-of-plane stresses; silicon; tensile stress; ultra-thin inorganic solid state substrates; Artificial intelligence; Logic gates; Stress; Surface treatment;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference (DRC), 2015 73rd Annual
Conference_Location
Columbus, OH
Print_ISBN
978-1-4673-8134-5
Type
conf
DOI
10.1109/DRC.2015.7175572
Filename
7175572
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