DocumentCode
729247
Title
Top-gated WSe2 field-effect transistors with Pt contacts
Author
Movva, H.C.P. ; Rai, A. ; Kang, S. ; Kim, K. ; Guchhait, S. ; Taniguchi, T. ; Watanabe, K. ; Tutuc, E. ; Banerjee, S.K.
Author_Institution
Microelectron. Res. Center, Univ. of Texas at Austin, Austin, TX, USA
fYear
2015
fDate
21-24 June 2015
Firstpage
131
Lastpage
132
Abstract
Tungsten diselenide (WSe2) is a transition metal dichalcogenide (TMD) that is being explored as an alternative channel material for p-type field-effect transistors (FETs). To date, making low resistance contacts to WSe2 has employed techniques like ionic-liquid gating [1], or surface charge-transfer doping [2], which are unscalable, and unstable in air. Here, we demonstrate top-gated, few-layered WSe2 p-FETs enabled by Ohmic platinum (Pt) contacts, and a hexagonal boron nitride (hBN) gate-dielectric, with ON/OFF ratios > 107, and intrinsic hole mobilities ~ 100 cm2/Vs at 300 K, and up to 2,000 cm2/Vs at 2 K.
Keywords
field effect transistors; ohmic contacts; platinum; semiconductor doping; tungsten compounds; FET; Pt; WSe2; ionic-liquid gating; ohmic platinum contacts; p-type field-effect transistors; surface charge-transfer doping; temperature 2 K; temperature 300 K; transition metal dichalcogenide; Logic gates; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference (DRC), 2015 73rd Annual
Conference_Location
Columbus, OH
Print_ISBN
978-1-4673-8134-5
Type
conf
DOI
10.1109/DRC.2015.7175590
Filename
7175590
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