DocumentCode
729259
Title
Analysis of the effect of gamma-ray irradiation and low-temperature characteristics of sol-gel derived ZnO thin-film transistors
Author
Wang, S. ; Mirkhani, V. ; Yapabandara, K. ; Ko, S. ; Sk, M.H. ; Park, M. ; Hamilton, M.C.
Author_Institution
Dept. of Electr. & Comput. Eng., Auburn Univ., Auburn, AL, USA
fYear
2015
fDate
21-24 June 2015
Firstpage
171
Lastpage
172
Abstract
Summary form only given. In conclusion, we investigated the effects of gamma-ray irradiation and low temperature on the device performance of sol-gel derived ZnO thin-film transistors. In both cases, the degradation of the device performance was observed. In the case of radiation study, further investigation is needed to identify which part of the device is damaged upon gamma-ray irradiation. Further details and results from additional experiments will be presented.
Keywords
II-VI semiconductors; gamma-rays; radiation hardening (electronics); sol-gel processing; thin film transistors; wide band gap semiconductors; zinc compounds; ZnO; gamma-ray irradiation; sol-gel; thin-film transistors; Logic gates; Performance evaluation; Radiation effects; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference (DRC), 2015 73rd Annual
Conference_Location
Columbus, OH
Print_ISBN
978-1-4673-8134-5
Type
conf
DOI
10.1109/DRC.2015.7175611
Filename
7175611
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