• DocumentCode
    729262
  • Title

    Can bilayer black phosphorus outperform monolayer in field-effect transistors?

  • Author

    Demin Yin ; Youngki Yoon

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of Waterloo, Waterloo, ON, Canada
  • fYear
    2015
  • fDate
    21-24 June 2015
  • Firstpage
    177
  • Lastpage
    178
  • Abstract
    Summary form only given. We have compared device performance of monolayer and bilayer BP FETs based on atomistic quantum transport simulations. This study reveals that, although monolayer BP FETs are robust against short-channel effects at Lch <; 7 nm, bilayer BP FETs show better on-state performance at longer channel length (e.g., >10 nm) without losing steep switching characteristic. Our benchmark against ITRS 2022 shows that BP FETs are promising for the future high-performance logic devices.
  • Keywords
    field effect transistors; logic devices; monolayers; phosphorus; semiconductor device models; ITRS 2022; P; atomistic quantum transport simulations; bilayer BP FET; bilayer black phosphorus; channel length; field-effect transistors; logic devices; monolayer BP FET; short-channel effects; steep switching characteristic; Benchmark testing; Effective mass; Field effect transistors; MOS devices; Performance evaluation; Switches;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference (DRC), 2015 73rd Annual
  • Conference_Location
    Columbus, OH
  • Print_ISBN
    978-1-4673-8134-5
  • Type

    conf

  • DOI
    10.1109/DRC.2015.7175614
  • Filename
    7175614
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=729262