DocumentCode :
729267
Title :
Impact of SMT-induced edge dislocation positions to NFET performance
Author :
Tzer-Min Shen ; Shui-Jinn Wang ; Zhi-Ren Xiao ; Chung-Cheng Wu ; Wu, Jeff ; Diaz, Carlos H.
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
fYear :
2015
fDate :
21-24 June 2015
Firstpage :
184
Lastpage :
184
Abstract :
This work highlights the impact of SMT-induced edge-dislocation positions in nFET device design. Based on experimental results and atomic transport simulation, dislocations with reduced proximity and depth would increase the amount of SFs and TDs which induce high parasitic resistance and high Iboff leakage current together. Trade-off among strained mobility, parasitic resistance and Iboff should be made for advanced device design.
Keywords :
MOSFET; edge dislocations; leakage currents; semiconductor device models; NFET performance; SMT-induced edge dislocation positions; atomic transport simulation; dislocations; leakage current; nFET device design; parasitic resistance; strained mobility; stress memorization technique; Atomic measurements; Crystals; Logic gates; Resistance; Silicon; Stacking; Stress;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference (DRC), 2015 73rd Annual
Conference_Location :
Columbus, OH
Print_ISBN :
978-1-4673-8134-5
Type :
conf
DOI :
10.1109/DRC.2015.7175621
Filename :
7175621
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=729267
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