• DocumentCode
    729285
  • Title

    Fabrication of thin-film HfS2 FET

  • Author

    Kanazawa, T. ; Amemiya, T. ; Ishikawa, A. ; Upadhyaya, V. ; Tsuruta, K. ; Tanaka, T. ; Miyamoto, Y.

  • Author_Institution
    Dept. Phys. Electron., Tokyo Inst. Technol., Tokyo, Japan
  • fYear
    2015
  • fDate
    21-24 June 2015
  • Firstpage
    217
  • Lastpage
    218
  • Abstract
    In conclusion, we demonstrated the fabrication and I-V characteristics of HfS2 FETs. For the channel thickness of less than 7.5 nm, a clear saturation behavior and drain current of 0.2 μA/μm were observed with reasonably good on/off current ratio. These results provide basic knowledge of HfS2 as a channel material for FET.
  • Keywords
    field effect transistors; hafnium compounds; HfS2; I-V characteristics; channel material; channel thickness; drain current; thin-film FET; Aluminum oxide; Field effect transistors; Gold; Logic gates; Photonic band gap; Silicon; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference (DRC), 2015 73rd Annual
  • Conference_Location
    Columbus, OH
  • Print_ISBN
    978-1-4673-8134-5
  • Type

    conf

  • DOI
    10.1109/DRC.2015.7175643
  • Filename
    7175643
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=729285