• DocumentCode
    729296
  • Title

    Physics-based compact model for circuit simulations of 2-dimensional semiconductor devices

  • Author

    Suryavanshi, Saurabh V. ; Pop, Eric

  • Author_Institution
    Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA
  • fYear
    2015
  • fDate
    21-24 June 2015
  • Firstpage
    235
  • Lastpage
    236
  • Abstract
    Anticipating a push towards circuit applications of field-effect transistors (FETs) with two-dimensional (2D) semiconductors like MoS2, there is a growing need to evaluate such devices at a circuit level. However, early 2D FET models have been either too idealistic or did not address circuit simulation. Here we describe the first SPICE-compatible compact model for realistic simulation of 2D FETs in circuits. The semi-classical model has been developed in Verilog-A and an initial version is available online. In addition to physical rigor, the model has been extensively calibrated against state-of-the-art experimental devices both from our lab and the published literature.
  • Keywords
    field effect transistors; semiconductor device models; 2-dimensional semiconductor devices; 2D FET models; SPICE-compatible compact model; Verilog-A; circuit applications; circuit level; circuit simulations; field-effect transistors; physics-based compact model; two-dimensional semiconductors; Doping; Metals; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference (DRC), 2015 73rd Annual
  • Conference_Location
    Columbus, OH
  • Print_ISBN
    978-1-4673-8134-5
  • Type

    conf

  • DOI
    10.1109/DRC.2015.7175654
  • Filename
    7175654