DocumentCode
729296
Title
Physics-based compact model for circuit simulations of 2-dimensional semiconductor devices
Author
Suryavanshi, Saurabh V. ; Pop, Eric
Author_Institution
Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA
fYear
2015
fDate
21-24 June 2015
Firstpage
235
Lastpage
236
Abstract
Anticipating a push towards circuit applications of field-effect transistors (FETs) with two-dimensional (2D) semiconductors like MoS2, there is a growing need to evaluate such devices at a circuit level. However, early 2D FET models have been either too idealistic or did not address circuit simulation. Here we describe the first SPICE-compatible compact model for realistic simulation of 2D FETs in circuits. The semi-classical model has been developed in Verilog-A and an initial version is available online. In addition to physical rigor, the model has been extensively calibrated against state-of-the-art experimental devices both from our lab and the published literature.
Keywords
field effect transistors; semiconductor device models; 2-dimensional semiconductor devices; 2D FET models; SPICE-compatible compact model; Verilog-A; circuit applications; circuit level; circuit simulations; field-effect transistors; physics-based compact model; two-dimensional semiconductors; Doping; Metals; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference (DRC), 2015 73rd Annual
Conference_Location
Columbus, OH
Print_ISBN
978-1-4673-8134-5
Type
conf
DOI
10.1109/DRC.2015.7175654
Filename
7175654
Link To Document