• DocumentCode
    729298
  • Title

    High mobility in monolayer MoS2 devices grown by chemical vapor deposition

  • Author

    Smithe, Kirby K. H. ; English, Christopher D. ; Suryavanshi, Saurabh V. ; Pop, Eric

  • Author_Institution
    Electr. Eng., Stanford Univ., Stanford, CA, USA
  • fYear
    2015
  • fDate
    21-24 June 2015
  • Firstpage
    239
  • Lastpage
    240
  • Abstract
    We have demonstrated FETs with L down to 80 nm on single-crystal 1L CVD-grown MoS2, with electrical properties comparable to (or better than) 1L exfoliated MoS2 and record current density. Such promising characteristics are realized in part through large-grain crystalline films with improved contacts. These results are an important step towards large-area electronics based on monolayer 2D semiconductors.
  • Keywords
    chemical vapour deposition; current density; field effect transistors; CVD; FET; MoS2; chemical vapor deposition; crystalline films; current density; electrical properties; high mobility; monolayer 2D semiconductors; monolayer devices; size 80 nm; Density measurement; Etching; Logic gates; Predictive models; Resistance; Resistance heating;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference (DRC), 2015 73rd Annual
  • Conference_Location
    Columbus, OH
  • Print_ISBN
    978-1-4673-8134-5
  • Type

    conf

  • DOI
    10.1109/DRC.2015.7175656
  • Filename
    7175656
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=729298