DocumentCode :
729303
Title :
An analytic model for heterojunction and homojunction tunnel FETs with 3D density of states
Author :
Jianzhi Wu ; Jie Min ; Jingwei Ji ; Yuan Taur
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of California, San Diego, La Jolla, CA, USA
fYear :
2015
fDate :
21-24 June 2015
Firstpage :
249
Lastpage :
250
Abstract :
This paper presents an analytic model for double gate (DG) tunnel FETs with 3D density of states. By evaluating two WKB integrals for mixed electron and hole tunneling, continuous current-voltage characteristics are generated with a single integral over the carrier energy. The model covers both heterojunction and homojunction TFETs. The results have been verified by numerical simulations. An expression for the maximum TFET current is derived for the 3D case. The corresponding Ids-Vds characteristics are contrasted with those of the 1D maximum current case.
Keywords :
electrons; field effect transistors; numerical analysis; semiconductor device models; 3D density; analytic model; continuous current-voltage characteristics; double gate tunnel FET; electron; heterojunction tunnel FET; hole tunneling; homojunction tunnel FET; numerical simulations;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference (DRC), 2015 73rd Annual
Conference_Location :
Columbus, OH
Print_ISBN :
978-1-4673-8134-5
Type :
conf
DOI :
10.1109/DRC.2015.7175663
Filename :
7175663
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=729303
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