The path to fabricating carbon nanotube array field effect transistors with uniform wafer scale performance suitable for advanced RF applications

One of the benefits of carbon nanotubes (CNTs) is that they are inherently linear at low power.¹ This characteristic makes them candidates for high dynamic range RF mixers and amplifiers; however, in order to meet the frequency requirements of 10-25 GHz for these devices, transconductances (G_m) of 5 to 12.5 μS/μm are necessary. These values mean that CNT array FETs with linear densities of 2-5 CNTs per micron are needed. Additionally, the current integration hurdles for CNT arrays are the presence of metallic tubes, which reduce G_m, and device variability across a wafer.