• DocumentCode
    729322
  • Title

    Demonstration of Ge CMOS inverter and ring oscillator with 10 nm ultra-thin channel

  • Author

    Heng Wu ; Conrad, Nathan ; Mengwei Si ; Ye, Peide D.

  • Author_Institution
    Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
  • fYear
    2015
  • fDate
    21-24 June 2015
  • Firstpage
    281
  • Lastpage
    282
  • Abstract
    In conclusion, we have demonstrated Ge CMOS devices with further scaled channel thickness of 10 nm. 9-stage ring oscillators are successfully realized. The channel thickness dependences of the devices behaviors are also studied and smaller Tch provides reduced SS and DIBL of MOSFETs and better voltage gain of CMOS inverters.
  • Keywords
    CMOS integrated circuits; MOSFET; invertors; CMOS inverters; DIBL; Ge; MOSFET; ring oscillator; size 10 nm; ultra-thin channel; CMOS integrated circuits; Inverters; Logic gates; MOSFET circuits;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference (DRC), 2015 73rd Annual
  • Conference_Location
    Columbus, OH
  • Print_ISBN
    978-1-4673-8134-5
  • Type

    conf

  • DOI
    10.1109/DRC.2015.7175685
  • Filename
    7175685
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=729322