Title :
Key technology development and future prospect for high-voltage Light-Emitting Diodes
Author :
Sufen Cheng ; Jin Xu ; Jiangbo Wang ; Rong Liu
Author_Institution :
HC SemiTek Corp., Wuhan, China
Abstract :
In this work, we have investigated various characteristics of the isolation trenches, such as surface roughness of sidewall, etching depth, inclined angle and distribution pattern, and their effects on the performance of HV LEDs. Through optimizing these physical properties of isolation trenches, 18V HV-LED chips (20*45mil) with excellent performance has been fabricated. Then the optoelectronic properties of HV-LEDs chips obtained are characterized. Lastly, the prospects for the fabrication technology and application of HV-LEDs in the future are discussed.
Keywords :
isolation technology; light emitting diodes; surface roughness; HV-LED chips; distribution pattern; etching depth; high-voltage light-emitting diodes; inclined angle; isolation trenches; optoelectronic properties; physical properties; surface roughness; Epitaxial growth; Etching; Fabrication; Gallium nitride; Light emitting diodes; Reliability; Rough surfaces;
Conference_Titel :
Solid State Lighting (ChinaSSL), 2013 10th China International Forum on
Conference_Location :
Beijing
Print_ISBN :
978-1-4799-2249-9
DOI :
10.1109/SSLCHINA.2013.7177348
