Implications of BTI-Induced Time-Dependent Statistics on Yield Estimation of Digital Circuits

Author

Weckx, Pieter ; Kaczer, Ben ; Toledano-Luque, Maria ; Raghavan, Praveen ; Franco, Jacopo ; Roussel, P.J. ; Groeseneken, Guido ; Catthoor, Francky

Author_Institution

Dept. of Electr. Eng., Katholieke Univ. Leuven, Leuven, Belgium

Volume

61

Issue

3

fYear

2014

fDate

Mar-14

Firstpage

666

Lastpage

673

Abstract

This paper describes the implications of bias temperature instability (BTI)-induced time-dependent threshold voltage distributions on the performance and yield estimation of digital circuits. The statistical distributions encompassing both time-zero and time-dependent variability and their correlations are discussed. The impact of using normally distributed threshold voltages, imposed by state-of-the-art design approaches, is contrasted with our defect-centric approach. Extensive Monte Carlo simulation results are shown for static random access memory cell and ring oscillator structures.

Keywords

CMOS digital integrated circuits; Monte Carlo methods; statistical distributions; voltage distribution; BTI-induced time-dependent statistics; CMOS devices; bias temperature instability; defect-centric approach; digital circuits; extensive Monte Carlo simulation; induced time-dependent threshold voltage distributions; ring oscillator structures; static random access memory cell; statistical distributions; time-dependent variability; time-zero; yield estimation; Approximation methods; Correlation; Degradation; Gaussian distribution; Reliability; SRAM cells; Transistors; Bias temperature instability (BTI); CMOS; reliability; static random access memory (SRAM); variability;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2013.2296358

Filename

6719591