Investigation of Fixed Oxide Charge and Fin Profile Effects on Bulk FinFET Device Characteristics

Author

Bomsoo Kim ; Dong-Il Bae ; Zeitzoff, Peter ; Xin Sun ; Standaert, Theodorus E. ; Tripathi, N. ; Scholze, A. ; Oldiges, Philip J. ; Dechao Guo ; Huiling Shang ; Kang-Ill Seo

Author_Institution

Samsung Electron., Albany, NY, USA

Volume

34

Issue

12

fYear

2013

fDate

Dec. 2013

Firstpage

1485

Lastpage

1487

Abstract

The effect of positive fixed oxide charge (Q_f) on the electrical characteristics of bulk FinFET devices is investigated and newly addressed as a Fin scaling detractor. The aggressively scaled Fin width leads to abnormal subthreshold slope (SS) degradation in nMOS devices even with a long channel length, while pMOS is free of such degradation. This observation is reproduced and analyzed by a well-calibrated TCAD simulation deck with Q_f introduced. A new Fin profile suppressing the Q_f effect is proposed, and the benefits of the new profile are predicted in terms of variability reduction and mobility improvement, as well as Q_f immunity.

Keywords

MOSFET; electron mobility; technology CAD (electronics); Fin profile effects; Fin scaling detractor; Q_f immunity; SS degradation; TCAD simulation; abnormal subthreshold slope; bulk FinFET device characteristics; electrical characteristics; long channel length; mobility improvement; nMOS devices; pMOS; positive fixed oxide charge; scaled Fin width; variability reduction; Degradation; Doping; FinFETs; Silicon; Bulk FinFET; fixed oxide charge; low-doped channel doping; mobility improvement; punch-through; random dopant fluctuation; shoulder-shaped Fin cross section; subthreshold degradation; tapered Fin; variability reduction;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2013.2285914

Filename

6650077