IN-plane gap-closing mems vibration electret energy harvester on thick box layer

Author

Qianyan Fu ; Suzuki, Yuji

Author_Institution

Dept. of Mech. Eng., Univ. of Tokyo, Tokyo, Japan

fYear

2015

fDate

21-25 June 2015

Firstpage

1925

Lastpage

1928

Abstract

In this report, an improved in-plane electret energy harvester with gap-closing comb drives has been developed with a single-mask SOI process. By using 150 μm-thick device layer for increasing the seismic mass and 15 μm-thick buried oxide layer for reducing the parasitic capacitance, up to 5.3 μW output power has been obtained at 503 Hz, which is equivalent of five times higher power output than our previous prototype. In addition, the power output reaches as high as 45% of the Velocity-Damped Resonance Generator (VDRG) limit.

Keywords

electrets; energy harvesting; micromechanical devices; silicon-on-insulator; vibrations; VDRG limit; gap-closing comb drives; inplane gap-closing MEMS vibration electret energy harvester; parasitic capacitance; seismic mass; single-mask SOI process; thick box layer; velocity-damped resonance generator limit; Capacitance; Electrets; Electrodes; Electrostatics; Fingers; Micromechanical devices; Power generation; Electret; Gap-closing; Parasitic Capacitance; SOI; Vibration Energy Harvesting;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS), 2015 Transducers - 2015 18th International Conference on

Conference_Location

Anchorage, AK

Type

conf

DOI

10.1109/TRANSDUCERS.2015.7181328

Filename

7181328