Integrated test concepts for in-situ millimeter-wave device characterization

Author

Kissinger, D. ; Nehring, J. ; Oborovski, A. ; Borutta, K. ; Nasr, I. ; Laemmle, B. ; Weigel, R.

Author_Institution

IHP, Frankfurt (Oder), Germany

fYear

2015

fDate

7-10 June 2015

Firstpage

1

Lastpage

4

Abstract

This paper presents our recent work towards state-of-the-art integrated test concepts for the in-situ characterization of silicon-integrated millimeter-wave devices and transceiver components for radar and communication applications. Narrowband as well as ultra-broadband integrated network analysis solutions for a variety of frequency bands ranging from 50 to 120 GHz are outlined. In this context, direct-conversion and heterodyne architectures and their respective implementations in silicon-germanium technologies are discussed.

Keywords

microwave measurement; millimetre wave devices; network analysers; radio transceivers; testing; communication applications; frequency 50 GHz to 120 GHz; in-situ millimeter wave device; integrated test; millimeter wave transceiver; narrowband integrated network analysis; radar applications; silicon integrated millimeter wave devices; silicon-germanium technologies; ultrabroadband integrated network analysis; Phase locked loops; Ports (Computers); Receivers; Sensors; Silicon; Transceivers; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

New Circuits and Systems Conference (NEWCAS), 2015 IEEE 13th International

Conference_Location

Grenoble

Type

conf

DOI

10.1109/NEWCAS.2015.7181980

Filename

7181980