Optimized temperature profile based pulse generator for innovative Phase Change Memory

In this paper, we discuss the increase of the SET state resistance distribution dispersion in Phase Change Memory (PCM) based on innovative materials, namely Ge-rich Ge₂Sb₂Te₅ (GST). A new programming technique, which consists in linearly decreasing the temperature in the active region of the memory device, is studied and a circuit capable of generating the desired pulse is presented and simulated. Post-layout simulations demonstrate the functionality of the circuit and its potential to be used for the programming of PCM cells based on alternative-to-GST materials.