Title :
A general scheme for noise-tolerant logic design based on probabilistic and DCVS approaches
Author :
Xinghua Yang ; Fei Qiao ; Qi Wei ; Huazhong Yang
Author_Institution :
Dept. of Electron. Eng., Tsinghua Univ., Beijing, China
Abstract :
The performance of logic function could be affected significantly by the noise effect as the dimension of CMOS devices scales to nanometers. Thus, many pertinent researches about noise-tolerant logic gate have received growing attention. Considering the randomness as the noise´s nature, probabilistic-based approach proves better noise-immunity and three design schemes with the technique of Markov Random Field (MRF) have been proposed in [1]-[3]. In this paper, a general circuit scheme for noise-tolerant logic design based on MRF theory and Differential Cascode Voltage Switch (DCVS) technique has been proposed, which is an extension of the work in [3], [4]. A DCVS block with only four transistors has been successfully inserted to the original circuit scheme from [3] and extensive simulation results based on HSPICE show that our proposed design can operate correctly with the input signal of 1dB SNR. When using the Kullback-Leibler Distance (KLD) [5] as the evaluation parameter, the KLD value of our design decreases by 76.5% on average than [3] which means that superior noise-immunity could be obtained through our work.
Keywords :
CMOS logic circuits; Markov processes; logic design; CMOS devices; Kullback-Leibler distance; Markov random field; differential cascode voltage switch technique; logic function; noise-tolerant logic design; Integrated circuit modeling; Logic circuits; Logic design; Logic gates; Noise; Probabilistic logic; Transistors;
Conference_Titel :
New Circuits and Systems Conference (NEWCAS), 2015 IEEE 13th International
Conference_Location :
Grenoble
DOI :
10.1109/NEWCAS.2015.7182002