Title :
A single photon avalanche detector in a 180 nm standard CMOS technology
Author :
Malass, Imane ; Uhring, Wilfried ; Le Normand, Jean-Pierre ; Dumas, Norbert ; Dadouche, Foudil
Author_Institution :
Univ. of Strasbourg, Strasbourg, France
Abstract :
We present the performance characteristics of a Single Photon Avalanche Detector fabricated in a 180 nm standard CMOS image sensor technology. The SPAD implemented in 8 different diameters between 5 μm and 40 μm shows a DCR below 10 kHz at 15°C with a low afterpulsing probability (0.2% at 300 mV), a good photodetection efficiency (20%) and a very good time resolution (80 ps at 450 nm).
Keywords :
CMOS image sensors; photodetectors; afterpulsing probability; dark count rate; single photon avalanche detector; size 180 nm; size 5 mum to 40 mum; standard CMOS image sensor technology; temperature 15 degC; CMOS integrated circuits; CMOS technology; Noise; Photonics; Standards; Temperature measurement; Time measurement; Avalanche Photodiodes; CMOS image sensor; Photodetector; SPAD; Single Photon Avalanche Diode;
Conference_Titel :
New Circuits and Systems Conference (NEWCAS), 2015 IEEE 13th International
Conference_Location :
Grenoble
DOI :
10.1109/NEWCAS.2015.7182011
