Title :
A 1V 830μW full-band ZigBee receiver front-end with current-reuse and Gm-boosting techniques
Author :
Zengqi Wang ; Zhiqun Li
Author_Institution :
Inst. of RF- & OE-ICs, Southeast Univ., Nanjing, China
Abstract :
A low-voltage low-power CMOS ZigBee receiver front-end supporting 780/868/915/2400MHz bands is presented in this paper. The wideband common-gate (CG) low noise amplifier (LNA) and the I/Q current-commutating mixer are merged in a single circuit, sharing the bias current. Active trans-conductance (gm) boosting technique is utilized in the design of the presented receiver front-end. The topology and optimization method of the presented front-end are shown. Post-layout simulation results for 180nm RF CMOS implementations show the conversion gain is 26.5dB at 780/868/915MHz bands and 19.5dB at 2400MHz band. The minimum simulated NF is 6.5dB. The receiver front-end consumes 830μW from a 1V DC supply and the active size of core circuit is 0.0276mm2.
Keywords :
CMOS integrated circuits; Zigbee; low noise amplifiers; low-power electronics; mixers (circuits); optimisation; radio receivers; wideband amplifiers; Gm-boosting techniques; I/Q current-commutating mixer; LNA; RF CMOS implementations; active transconductance boosting technique; bias current; current-reuse techniques; frequency 2400 MHz; frequency 780 MHz; frequency 868 MHz; frequency 915 MHz; full-band ZigBee receiver front-end; gain 19.5 dB; gain 26.5 dB; low noise amplifier; low-voltage low-power CMOS ZigBee receiver front-end; noise figure 6.5 dB; optimization method; power 830 muW; size 180 nm; voltage 1 V; wideband common-gate; CMOS integrated circuits; Impedance matching; Mixers; Noise measurement; Radio frequency; Receivers; Zigbee; CMOS; ZigBee; current-reuse; full-band; low-power; low-voltage; receiver front-end;
Conference_Titel :
New Circuits and Systems Conference (NEWCAS), 2015 IEEE 13th International
Conference_Location :
Grenoble
DOI :
10.1109/NEWCAS.2015.7182015
