• DocumentCode
    73251
  • Title

    BTI-Aware Sleep Transistor Sizing Algorithm for Reliable Power Gating Designs

  • Author

    Kai-Chiang Wu ; Ing-Chao Lin ; Yao-Te Wang ; Shuen-Shiang Yang

  • Author_Institution
    Dept. of Comput. Sci., Nat. Chao Tung Univ., Hsinchu, Taiwan
  • Volume
    33
  • Issue
    10
  • fYear
    2014
  • fDate
    Oct. 2014
  • Firstpage
    1591
  • Lastpage
    1595
  • Abstract
    Power gating is an effective way to reduce leakage power. This technique uses high Vth transistors, called sleep transistors, to turn off the power supply. However, sleep transistors suffer from the bias temperature instability (BTI) effect, resulting in an increased Vth, and reduced reliability. This paper proposes two BTI-aware sleep transistor sizing algorithms to reduce the total width of sleep transistors based on the distributed sleep transistor network structure. The proposed algorithms reduce total width by more than 16.08%. More area can be reduced if the BTI effect on both sleep and cluster transistors is considered.
  • Keywords
    MOSFET; negative bias temperature instability; semiconductor device reliability; BTI-aware sleep transistor sizing algorithm; bias temperature instability effect; cluster transistors; distributed sleep transistor network structure; leakage power reduction; power supply; reliable power gating designs; total width reduction; Algorithm design and analysis; Clustering algorithms; Degradation; Resistance; Runtime; Switching circuits; Transistors; BTI effect; power gating; reliability;
  • fLanguage
    English
  • Journal_Title
    Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0278-0070
  • Type

    jour

  • DOI
    10.1109/TCAD.2014.2334331
  • Filename
    6899800