• DocumentCode
    732665
  • Title

    Manipulating the valley pseudospin in MoS2 transistors

  • Author

    Mak, Kin F.

  • Author_Institution
    Penn State Univ., University Park, PA, USA
  • fYear
    2015
  • fDate
    10-15 May 2015
  • Firstpage
    1
  • Lastpage
    1
  • Abstract
    Summary form only given. Monolayer MoS2 possess a new valley-pseudospin degree of freedom besides electronic charge and spin. In this talk I will talk about our recent results on optical generation of valley polarization, based on which a novel Hall effect associated with the new degree of freedom is demonstrated. The mechanisms responsible for driving the new valley Hall effect will be discussed.
  • Keywords
    Hall effect; light polarisation; molybdenum compounds; monolayers; nanophotonics; nanostructured materials; optical materials; phototransistors; semiconductor materials; MoS2 transistors; MoS2; electronic charge; electronic spin; monolayer MoS2; optical generation; valley Hall effect; valley polarization; valley pseudospin; valley-pseudospin degree of freedom; Hall effect; Nanoscale devices; Nanostructured materials; Optical devices; Optical materials; Optical polarization; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2015 Conference on
  • Conference_Location
    San Jose, CA
  • Type

    conf

  • Filename
    7183101
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=732665