• DocumentCode
    732771
  • Title

    Nondegenerate two-photon gain in GaAs

  • Author

    Reichert, Matthew ; Hagan, David J. ; Van Stryland, Eric W.

  • Author_Institution
    Coll. of Opt. & Photonics, Univ. of Central Florida, Orlando, FL, USA
  • fYear
    2015
  • fDate
    10-15 May 2015
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We present data indicating two-photon gain using extremely nondegenerate (END) photons in optically excited GaAs. These results are consistent with our demonstration of END two-photon absorption enhancement and points a possible way to two-photon lasing.
  • Keywords
    III-V semiconductors; gallium arsenide; semiconductor lasers; two-photon processes; END two-photon absorption enhancement; GaAs; extremely nondegenerate photons; optically excited GaAs; two-photon gain; two-photon lasing; Delays; Gallium arsenide; Optical polarization; Photonics; Probes; Sociology; Statistics;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2015 Conference on
  • Conference_Location
    San Jose, CA
  • Type

    conf

  • Filename
    7183208