DocumentCode
732906
Title
Ultrafast terahertz spectroscopy of the inverse giant piezoresistance effect in silicon nanomembranes
Author
Jaeseok Kim ; Houk Jang ; Min-Seok Kim ; Jeong Ho Cho ; Jong-Hyun Ahn ; Hyunyong Choi
Author_Institution
Sch. of Electr. & Electron. Eng., Yonsei Univ., Seoul, South Korea
fYear
2015
fDate
10-15 May 2015
Firstpage
1
Lastpage
2
Abstract
We observe the clear inverse piezoresistance effect in the silicon nanomembranes. Thickness-dependent optical-pump terahertz spectroscopy strongly corroborate that the effect originates from the carrier-concentration changes via charge carrier trapping into strain-induced defect states.
Keywords
carrier density; defect states; elemental semiconductors; high-speed optical techniques; nanostructured materials; optical pumping; piezoresistance; silicon; terahertz wave spectra; Si; carrier-concentration; charge carrier trapping; inverse giant piezoresistance effect; silicon nanomembranes; strain-induced defect states; thickness-dependent optical-pump terahertz spectroscopy; ultrafast terahertz spectroscopy; Charge carrier density; Piezoresistance; Silicon; Spectroscopy; Strain; Surface treatment; Ultrafast optics;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO), 2015 Conference on
Conference_Location
San Jose, CA
Type
conf
Filename
7183343
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