DocumentCode :
732978
Title :
The effect on dot gain behaviour of confining layer composition in InP/(Al)GaInP quantum dot lasers
Author :
Smith, M. ; Elliott, S.N. ; Kasim, M. ; Smowton, P.M. ; Krysa, A.B.
Author_Institution :
Sch. of Phys. & Astron., Cardiff Univ., Cardiff, UK
fYear :
2015
fDate :
10-15 May 2015
Firstpage :
1
Lastpage :
2
Abstract :
Reductions in non-radiative recombination and αi with increasing Ga composition of the upper-confining-layer in InP self-assembled quantum-dot lasers reduce threshold-current-density and temperature dependence. Carrier population of 2-D layers limits further improvement at higher Ga compositions.
Keywords :
III-V semiconductors; aluminium compounds; current density; gallium compounds; indium compounds; laser beams; quantum dot lasers; self-assembly; InP-AlGaInP; carrier population; confining layer composition; dot gain behaviour; nonradiative recombination; self-assembled quantum-dot lasers; temperature dependence; threshold-current-density; upper-confining-layer; III-V semiconductor materials; Indium phosphide; Quantum dot lasers; Quantum dots; Temperature dependence; Temperature measurement; Threshold current;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2015 Conference on
Conference_Location :
San Jose, CA
Type :
conf
Filename :
7183415
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=732978
بازگشت