DocumentCode
732988
Title
GaN-based ridge waveguides with very smooth and vertical sidewalls by ICP dry etching and chemical etching
Author
Wanyong Li ; Yi Luo ; Bing Xiong ; Changzheng Sun ; Lai Wang ; Jian Wang ; Yanjun Han ; Jianchang Yan ; Tongbo Wei ; Hongxi Lu
Author_Institution
Dept. of Electron. Eng., Tsinghua Univ., Beijing, China
fYear
2015
fDate
10-15 May 2015
Firstpage
1
Lastpage
2
Abstract
GaN-based ridge waveguides with very smooth and vertical sidewalls are fabricated with combined inductively coupled plasma (ICP) etching and chemical etching. Reduction in scattering loss is estimated to be 2 dB/mm at 1.55 μm.
Keywords
III-V semiconductors; gallium compounds; optical fabrication; optical losses; optical waveguides; ridge waveguides; sputter etching; GaN; GaN-based ridge waveguides; ICP dry etching; chemical etching; inductively coupled plasma etching; scattering loss reduction; wavelength 1.55 mum; Chemicals; Dry etching; Iterative closest point algorithm; Optical device fabrication; Optical resonators; Optical waveguides;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO), 2015 Conference on
Conference_Location
San Jose, CA
Type
conf
Filename
7183425
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